Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer
نویسندگان
چکیده
We report an oscillation of the giant magnetoresistance GMR ratio as a function of Ru layer thickness in the CoFe/Cu/ CoFe/Ru/CoFe SAF/Cu/CoFe/IrMn dual spin valve SV structure. A normal GMR with a positive sign is observed for the thickness of Ru providing a ferromagnetic interlayer exchange coupling IEC . The inverted GMR is observed for the thickness of Ru providing an antiferromagnetic IEC, which is consistent with IEC period across the Ru spacer as well as the electrical separation of the overall structure into two SVs connected in parallel. © 2009 American Institute of Physics. doi:10.1063/1.3266522
منابع مشابه
Multilevel Magnetization Switching in a Dual Spin Valve Structure
Here, we describe a dual spin valve structure with distinct switching fields for two pinned layers. A device with this structure has a staircase of three distinct magnetoresistive states. The multiple resistance states are achieved by controlling the exchange coupling between two ferromagnetic pinned layers and two adjacent antiferromagnetic pinning layers. The maximum magnetoresistance ratio i...
متن کاملامواج اسپین و ناهمسانگردی تک جهتی در دولایهایهای نازک فرومغناطیسپادفرومغناطیسی
In this paper a simple model calculation of spin wave is given for the ferromagtic layer in ultra thin ferromagnetic/antiferromagnetic bilayer. In this model the magnetic layer is assumed as an isolated layer but the effect of antiferromagnetic layer on ferromagnetic layer and unidirectional anisotropy, is given in the effective field applied on each spin. The thin layer is assumed as two-dim...
متن کاملSuperparamagnetism in MgO-based magnetic tunnel junctions with a thin pinned ferromagnetic electrode
MgO-based magnetic tunnel junctions have been fabricated with a thin Co40Fe40B20 CoFeB layer in the pinned synthetic antiferromagnetic CoFe/Ru/CoFeB stack. An inverted tunneling magnetoresistance is observed due to the unbalanced synthetic antiferromagnet. Superparamagnetic nanoparticles form when the CoFeB layer is thinner than 1.5 nm, and an abnormal temperature dependence of the junction res...
متن کاملEnhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange.
The electrical resistivity of Fe-Cr-Fe layers with antiferromagnetic interlayer exchange increases when the magnetizations of the Fe layers are aligned antiparallel. The eA'ect is much stronger than the usual anisotropic magnetoresistance and further increases in structures with more than two Fe layers. It can be explained in terms of spin-Aip scattering of conduction electrons caused by the an...
متن کاملIsothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn
Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the...
متن کامل